Polycrystalline silicon carbide for surface micromachining
Polycrystalline silicon carbide (poly-SiC) films have been deposited on polysilicon-coated, 4-inch silicon wafers in an atmospheric pressure chemical vapor deposition (APCVD) reactor using parameters similar to those developed by our group for single crystal SiC growth. With highly-oriented (110) polysilicon films as substrates, poly-SiC films of the …
